Renesas Electronics Corp. RJH60T04DPQ-A0#T0 | 搜芯易Sourcengine

Renesas Electronics Corp. RJH60T04DPQ-A0#T0

生命周期状态
EOL
RoHS
符合RoHS标准
REACH
REACH compliant
说明
IGBT TH
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Surface Mount
NO
Polarity/Channel Type
N-CHANNEL
Gate-emitter Voltage-Max
30 V
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
60 A
Power Dissipation-Max (Abs)
208.3 W
Gate-emitter Thr Voltage-Max
8 V
Collector-emitter Voltage-Max
600 V