Renesas Electronics Corp. RJH60F6DPK-00-T0 | 搜芯易Sourcengine

Renesas Electronics Corp. RJH60F6DPK-00-T0

生命周期状态
EOL
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Insulated Gate Bipolar Transistor, 85A I(C), 600V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Case Connection
COLLECTOR
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
298
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
65
Gate-emitter Voltage-Max (V)
30
Turn-off Time-Nom (toff) (ns)
186
Collector Current-Max (IC) (A)
85
Operating Temperature-Max (Cel)
150
Gate-emitter Thr Voltage-Max (V)
8
Collector-emitter Voltage-Max (V)
600