Renesas Electronics Corp. RJH60A83RDPD-A0#J2 | 搜芯易Sourcengine

Renesas Electronics Corp. RJH60A83RDPD-A0#J2

生命周期状态
EOL
RoHS
符合RoHS标准
说明
IGBT for Inverter Applications
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
5A002
ECCN Governance
EAR

Surface Mount
YES
Polarity/Channel Type
N-CHANNEL
Gate-emitter Voltage-Max
30 V
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
20 A
Power Dissipation-Max (Abs)
51 W
Collector-emitter Voltage-Max
600 V
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED