Renesas Electronics Corp. RJH60A81RDPD-E0#J2 | 搜芯易Sourcengine

Renesas Electronics Corp. RJH60A81RDPD-E0#J2

生命周期状态
Discontinued
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Surface Mount
YES
Polarity/Channel Type
N-CHANNEL
Gate-emitter Voltage-Max
30 V
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
10 A
Power Dissipation-Max (Abs)
29.4 W
Collector-emitter Voltage-Max
600 V