Renesas Electronics Corp. RJH1CM5DPQ-E0#T2 | 搜芯易Sourcengine

Renesas Electronics Corp. RJH1CM5DPQ-E0#T2

生命周期状态
EOL
RoHS
符合RoHS标准
说明
IGBT for Inverter Applications
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
5A002
ECCN Governance
EAR

JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-247
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Case Connection
COLLECTOR
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Transistor Application
POWER CONTROL
Turn-on Time-Nom (ton)
58 ns
Gate-emitter Voltage-Max
30 V
Turn-off Time-Nom (toff)
225 ns
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
30 A
Power Dissipation-Max (Abs)
260.4 W
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
1200 V
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED