ROHM Semiconductor RGTVX2TS65DGC13 | 搜芯易Sourcengine

ROHM Semiconductor RGTVX2TS65DGC13

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Insulated Gate Bipolar Transistor, 111A I(C), 650V V(BR)CES, N-Channel, TO-247
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-247
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
VCEsat-Max (V)
1.9
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
319
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
72
Gate-emitter Voltage-Max (V)
30
Peak Reflow Temperature (Cel)
260
Turn-off Time-Nom (toff) (ns)
184
Collector Current-Max (IC) (A)
111
Operating Temperature-Max (Cel)
175
Operating Temperature-Min (Cel)
-40
Gate-emitter Thr Voltage-Max (V)
7
Collector-emitter Voltage-Max (V)
650
Time@Peak Reflow Temperature-Max (s)
20