ROHM Semiconductor RGT8BM65DGTL1 | 搜芯易Sourcengine

ROHM Semiconductor RGT8BM65DGTL1

生命周期状态
Active
RoHS
符合RoHS标准
说明
Trans IGBT Chip N-CH 650V 12A 62W 3-Pin(2+Tab) DPAK
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-252
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
VCEsat-Max (V)
2.1
Case Connection
COLLECTOR
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
62
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
53
Gate-emitter Voltage-Max (V)
30
Peak Reflow Temperature (Cel)
260
Turn-off Time-Nom (toff) (ns)
140
Collector Current-Max (IC) (A)
12
Operating Temperature-Max (Cel)
175
Operating Temperature-Min (Cel)
-40
Gate-emitter Thr Voltage-Max (V)
7
Collector-emitter Voltage-Max (V)
650
Time@Peak Reflow Temperature-Max (s)
30