ROHM Semiconductor RGT50TM65DGC9 | 搜芯易Sourcengine

ROHM Semiconductor RGT50TM65DGC9

生命周期状态
Active
RoHS
符合RoHS标准
说明
Trans IGBT Chip N-CH 650V 21A 47000mW 3-Pin(3+Tab) TO-220NFM Tube
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-220AB
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
J-STD-609 Code
e3
Case Connection
ISOLATED
Terminal Finish
Tin (Sn)
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
65
Peak Reflow Temperature (Cel)
260
Turn-off Time-Nom (toff) (ns)
210
Collector Current-Max (IC) (A)
21
Operating Temperature-Min (Cel)
-40
Collector-emitter Voltage-Max (V)
650
Time@Peak Reflow Temperature-Max (s)
20