ROHM Semiconductor RGT40NS65DGTL | 搜芯易Sourcengine

ROHM Semiconductor RGT40NS65DGTL

生命周期状态
NRFND
RoHS
符合RoHS标准
说明
IGBT Transistors 650v 20a field stop trench igbt
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
J-STD-609 Code
e3
Case Connection
COLLECTOR
Terminal Finish
Tin (Sn)
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
51
Peak Reflow Temperature (Cel)
260
Turn-off Time-Nom (toff) (ns)
204
Collector Current-Max (IC) (A)
40
Collector-emitter Voltage-Max (V)
650
Time@Peak Reflow Temperature-Max (s)
20