ROHM Semiconductor RD3L08BGNTL | 搜芯易Sourcengine

ROHM Semiconductor RD3L08BGNTL

生命周期状态
Active
RoHS
符合RoHS标准
说明
MOSFET N-CH 60V 80A TO252
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-252
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
80
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
60
Peak Reflow Temperature (Cel)
260
Avalanche Energy Rating (Eas) (mJ)
60
Pulsed Drain Current-Max (IDM) (A)
160
Drain-source On Resistance-Max (ohm)
0.0055
Time@Peak Reflow Temperature-Max (s)
30