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R6530ENXC7G

ROHM Semiconductor

ROHM Semiconductor R6530ENXC7G
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • Application
    SWITCHING
  • JESD-30 Code
    R-PSFM-T3
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • JEDEC-95 Code
    TO-220AB
  • Package Shape
    RECTANGULAR
  • Package Style
    FLANGE MOUNT Meter
  • Surface Mount
    NO
  • Terminal Form
    THROUGH-HOLE
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    ISOLATED
  • Terminal Position
    SINGLE
  • Number of Elements
    1
  • Number of Terminals
    3
  • Package Body Material
    PLASTIC/EPOXY
  • Polarity/Channel Type
    N-CHANNEL
  • Power Dissipation-Max (W)
    86
  • Drain Current-Max (ID) (A)
    30
  • Moisture Sensitivity Level
    1
  • Transistor Element Material
    SILICON
  • DS Breakdown Voltage-Min (V)
    650
  • Feedback Cap-Max (Crss) (pF)
    230
  • Peak Reflow Temperature (Cel)
    260
  • Operating Temperature-Max (Cel)
    150
  • Operating Temperature-Min (Cel)
    -55
  • Avalanche Energy Rating (Eas) (mJ)
    730
  • Pulsed Drain Current-Max (IDM) (A)
    90
  • Drain-source On Resistance-Max (ohm)
    0.14
  • Time@Peak Reflow Temperature-Max (s)
    30

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R6530ENXC7G
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R6530ENXC7G