ROHM Semiconductor R5011ANX | 搜芯易Sourcengine

ROHM Semiconductor R5011ANX

生命周期状态
Discontinued
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Trans MOSFET N-CH Si 500V 11A 3-Pin(3+Tab) TO-220FM Bulk
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSFM-T3
Configuration
Single
JEDEC-95 Code
TO-220AB
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
ISOLATED
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
50
Drain Current-Max (ID) (A)
11
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
500
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
150
Avalanche Energy Rating (Eas) (mJ)
8.1
Pulsed Drain Current-Max (IDM) (A)
44
Drain-source On Resistance-Max (ohm)
0.5
Time@Peak Reflow Temperature-Max (s)
30