ROHM Semiconductor R5009FNJTL | 搜芯易Sourcengine

ROHM Semiconductor R5009FNJTL

生命周期状态
Active
RoHS
符合RoHS标准
说明
MOSFET N-CH 500V 9A LPTS
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
9
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
500
Peak Reflow Temperature (Cel)
260
Avalanche Energy Rating (Eas) (mJ)
5.4
Pulsed Drain Current-Max (IDM) (A)
36
Drain-source On Resistance-Max (ohm)
0.84
Time@Peak Reflow Temperature-Max (s)
30