ROHM Semiconductor R4P030N03HZGT100 | 搜芯易Sourcengine

ROHM Semiconductor R4P030N03HZGT100

生命周期状态
Active
RoHS
符合RoHS标准
说明
Trans MOSFET N-CH 30V 3A Automotive 4-Pin(3+Tab) MPT
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSSO-F3
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
2
Drain Current-Max (ID) (A)
3
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
30
Feedback Cap-Max (Crss) (pF)
27
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Pulsed Drain Current-Max (IDM) (A)
10
Drain-source On Resistance-Max (ohm)
0.24
Screening Level / Reference Standard
AEC-Q101
Time@Peak Reflow Temperature-Max (s)
30