R1QPA4436RBG-30IB0
Renesas Electronics Corp.
- 生命周期状态EOL
- RoHS符合RoHS标准
- 说明QDRII/DDRII/ QDRII+/DDRII+ SRAM
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.41
- SB Code8542.32.00.40
- Width15
- Length17
- TechnologyCMOS
- JESD-30 CodeR-PBGA-B165
- Memory Width36
- Organization4MX36
- Package CodeLBGA
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, LOW PROFILE Meter
- Surface MountYES
- Terminal FormBALL
- Memory Density150994944 bit
- Memory IC TypeQDR SRAM
- Operating ModeSYNCHRONOUS
- Terminal Pitch1 mm
- Access Time-Max0.45 ns
- Number of Words4194304 words
- Parallel/SerialPARALLEL
- Seated Height-Max1.4 mm
- Temperature GradeINDUSTRIAL
- Terminal PositionBOTTOM
- Number of Functions1
- Number of Terminals165
- Number of Words Code4M
- Package Body MaterialPLASTIC/EPOXY
- Operating Temperature-Max85 Cel
- Operating Temperature-Min-40 Cel
- Supply Voltage-Max (Vsup)1.9 V
- Supply Voltage-Min (Vsup)1.7 V
- Supply Voltage-Nom (Vsup)1.8 V
- Moisture Sensitivity Level3
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