R1QDA4418RBG-19IB0
Renesas Electronics Corp.
- 生命周期状态EOL
- RoHS符合RoHS标准
- REACHREACH compliant
- 说明144-Mbit QDR™II+ SRAM 4-word Burst Architecture (2.5 Cycle Read latency) with ODT
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.41
- SB Code8542.32.00.40
- Memory IC TypeQDR II PLUS SRAM
- Moisture Sensitivity Level3
- Width15
- Length17
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