Renesas Electronics Corp. R1Q3A7218ABB-40RA | 搜芯易Sourcengine

Renesas Electronics Corp. R1Q3A7218ABB-40RA

生命周期状态
Active
REACH
REACH compliant
说明
QDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165
类别
Semiconductors Memory ICs SRAMs QDR SRAM

ECCN
3A991.b.2.a
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

Technology
CMOS
Width (mm)
13
Length (mm)
15
JESD-30 Code
R-PBGA-B165
Memory Width
18
Package Code
LBGA
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, LOW PROFILE Meter
Surface Mount
YES
Terminal Form
BALL
Memory IC Type
QDR SRAM
Operating Mode
SYNCHRONOUS
Parallel/Serial
PARALLEL
Temperature Grade
COMMERCIAL
Terminal Position
BOTTOM
Memory Organization
4MX18
Number of Functions
1
Number of Terminals
165
Terminal Pitch (mm)
1
Access Time-Max (ns)
0.45
Number of Words Code
4M
Memory Density (bits)
75497472
Package Body Material
PLASTIC/EPOXY
Seated Height-Max (mm)
1.4
Supply Voltage-Max (V)
1.9
Supply Voltage-Min (V)
1.7
Supply Voltage-Nom (V)
1.8
Number of Words (words)
4194304
Operating Temperature-Max (Cel)
70
Operating Temperature-Min (Cel)
0