Renesas Electronics Corp. R1EX24512BTAS0G#U0 | 搜芯易Sourcengine

Renesas Electronics Corp. R1EX24512BTAS0G#U0

生命周期状态
EOL
RoHS
符合RoHS标准
说明
EEPROM
类别
Semiconductors Memory ICs EEPROMs EEPROM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.51
SB Code
8542.32.00.50

Width
4.4
Length
3
Endurance
1000000 Write/Erase Cycles
Technology
CMOS
JESD-30 Code
R-PDSO-G8
Memory Width
8
Organization
64KX8
Package Code
TSSOP
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH Meter
Surface Mount
YES
Terminal Form
GULL WING
Memory Density
524288 bit
Memory IC Type
EEPROM
Operating Mode
SYNCHRONOUS
Terminal Pitch
0.65 mm
Number of Words
65536 words
Parallel/Serial
SERIAL
Serial Bus Type
I2C
I2C Control Byte
1010DDDR
Write Protection
HARDWARE
Seated Height-Max
1.1 mm
Temperature Grade
INDUSTRIAL
Terminal Position
DUAL
Supply Current-Max
5 mA
Number of Functions
1
Number of Terminals
8
Standby Current-Max
2.0E-6 Amp
Number of Words Code
64K
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Data Retention Time-Min
20
Package Equivalence Code
TSSOP8,.25
Operating Temperature-Max
105 Cel
Operating Temperature-Min
-40 Cel
Supply Voltage-Max (Vsup)
5.5 V
Supply Voltage-Min (Vsup)
1.8 V
Supply Voltage-Nom (Vsup)
3.3 V
Clock Frequency-Max (fCLK)
0.4 MHz
Write Cycle Time-Max (tWC)
5 ms
Peak Reflow Temperature (Cel)
260