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R1EV58256BDANBI#B2

Renesas Electronics Corp.

Renesas Electronics Corp. R1EV58256BDANBI#B2
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • HTS Code
    8542.32.00.51
  • SB Code
    8542.32.00.50
  • Ready/Busy
    YES
  • Technology
    CMOS
  • Toggle Bit
    YES
  • Width (mm)
    15.24
  • Length (mm)
    35.6
  • Data Polling
    YES
  • JESD-30 Code
    R-PDIP-T28
  • Memory Width
    8
  • Package Code
    DIP
  • Package Shape
    RECTANGULAR
  • Package Style
    IN-LINE Meter
  • Surface Mount
    NO
  • Terminal Form
    THROUGH-HOLE
  • Memory IC Type
    EEPROM
  • Operating Mode
    ASYNCHRONOUS
  • Parallel/Serial
    PARALLEL
  • Terminal Position
    DUAL
  • Memory Organization
    32KX8
  • Number of Functions
    1
  • Number of Terminals
    28
  • Terminal Pitch (mm)
    2.54
  • Access Time-Max (ns)
    120
  • Number of Words Code
    32K
  • Memory Density (bits)
    262144
  • Package Body Material
    PLASTIC/EPOXY
  • Output Characteristics
    3-STATE
  • Seated Height-Max (mm)
    5.7
  • Supply Voltage-Max (V)
    5.5
  • Supply Voltage-Min (V)
    2.7
  • Supply Voltage-Nom (V)
    3
  • Data Retention Time-Min
    10
  • Number of Words (words)
    32768
  • Programming Voltage (V)
    3
  • Standby Current-Max (A)
    2.0E-5
  • Supply Current-Max (mA)
    30
  • Package Equivalence Code
    DIP28,.6
  • Moisture Sensitivity Level
    1
  • Endurance (Write/Erase Cycles)
    100000
  • Operating Temperature-Max (Cel)
    85
  • Operating Temperature-Min (Cel)
    -40
  • Write Cycle Time-Max (tWC) (ms)
    10

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