Q65112A1150
OSRAM Opto Semiconductors GmbH.
- 生命周期状态Discontinued
- RoHS符合RoHS标准
- REACHREACH compliant
- 说明Laser Diode, 850nm
- 类别
- ShapeROUND
- Size (mm)2
- ConfigurationSINGLE WITH BUILT-IN PHOTO DIODE
- Packing MethodTRAY
- Mounting FeatureRADIAL MOUNT
- Number of Functions1
- Peak Wavelength (nm)850
- Output Power-Nom (mW)200
- Forward Current-Max (A)0.26
- Forward Voltage-Max (V)2.2
- Optoelectronic Device TypeLASER DIODE
- Threshold Current-Max (mA)85
- Operating Temperature-Max (Cel)60
- Operating Temperature-Min (Cel)-20
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Q65112A1150