PERFORMANCE SEMICONDUCTOR CORP P4C214-25GR52B | 搜芯易Sourcengine

PERFORMANCE SEMICONDUCTOR CORP P4C214-25GR52B

生命周期状态
Discontinued
说明
Cache SRAM, 16KX16, 25ns, CMOS, CQCC52
类别
Semiconductors Memory ICs SRAMs CACHE SRAM

ECCN
3A001.a.2.c
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

I/O Type
COMMON
Technology
CMOS
JESD-30 Code
S-CQCC-J52
Memory Width
16
Package Code
QCCJ
Output Enable
YES
Package Shape
SQUARE
Package Style
CHIP CARRIER Meter
Surface Mount
YES
Terminal Form
J BEND
J-STD-609 Code
e0
Memory IC Type
CACHE SRAM
Operating Mode
ASYNCHRONOUS
Number of Ports
1
Parallel/Serial
PARALLEL
Terminal Finish
Tin/Lead (Sn/Pb)
DLA Qualification
Not Qualified
Temperature Grade
MILITARY
Terminal Position
QUAD
Additional Feature
ADDRESS LATCH; 2-WAY 8K X 16
Memory Organization
16KX16
Number of Functions
1
Number of Terminals
52
Terminal Pitch (mm)
1.27
Access Time-Max (ns)
25
Number of Words Code
16K
Memory Density (bits)
262144
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Output Characteristics
3-STATE
Supply Voltage-Max (V)
5.5
Supply Voltage-Min (V)
4.5
Supply Voltage-Nom (V)
5
Number of Words (words)
16384
Standby Current-Max (A)
0.36
Standby Voltage-Min (V)
4.5
Supply Current-Max (mA)
360
Package Equivalence Code
LDCC52,.8SQ
Operating Temperature-Max (Cel)
125
Operating Temperature-Min (Cel)
-55
Screening Level / Reference Standard
38535Q/M;38534H;883B