Renesas Electronics Corp. NX6342EP-AZ | 搜芯易Sourcengine

Renesas Electronics Corp. NX6342EP-AZ

生命周期状态
EOL
RoHS
符合RoHS标准
说明
310 nm AlGaInAs MQW-DFB Laser Diode for 10 Gb/s BASE-LR/LW Application
类别
Semiconductors Optoelectronics Laser Diodes LASER DIODE

Shape
ROUND
Size (mm)
2
Configuration
SINGLE WITH BUILT-IN PHOTO DIODE
Mounting Feature
THROUGH HOLE MOUNT
Number of Functions
1
Peak Wavelength (nm)
1330
Output Power-Nom (mW)
15
Response Time-Max (s)
5.0E-11
Semiconductor Material
AlGaInAs
Forward Current-Max (A)
0.12
Optoelectronic Device Type
LASER DIODE
Threshold Current-Max (mA)
30
Operating Temperature-Max (Cel)
85
Operating Temperature-Min (Cel)
-5