NTE Electronics Inc. NTE2666 | 搜芯易Sourcengine

NTE Electronics Inc. NTE2666

生命周期状态
Discontinued
RoHS
符合RoHS标准
说明
Power Bipolar Transistor, 8A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
类别
Semiconductors Transistors Other Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

JESD-30 Code
R-PSFM-T3
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
VCEsat-Max (V)
0.5
Case Connection
COLLECTOR
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
DC Current Gain-Min (hFE)
10
Power Dissipation-Max (W)
50
Transistor Element Material
SILICON
Collector Current-Max (IC) (A)
8
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-65
Collector-emitter Voltage-Max (V)
250
Power Dissipation Ambient-Max (W)
2
Transition Frequency-Nom (fT) (MHz)
30