Renesas Electronics Corp. NP82N055EHE | 搜芯易Sourcengine

Renesas Electronics Corp. NP82N055EHE

生命周期状态
EOL
REACH
REACH compliant
说明
Power Field-Effect Transistor, 82A I(D), 55V, 0.0086ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-263AB
JESD-609 Code
e0
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
TIN LEAD
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
82 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
55 V
Operating Temperature-Max
175 Cel
Power Dissipation-Max (Abs)
1.8 W
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
289 mJ
Drain-source On Resistance-Max
0.0086 ohm
Pulsed Drain Current-Max (IDM)
300 A