Renesas Electronics Corp. NP82N04MUG-S18-AY | 搜芯易Sourcengine

Renesas Electronics Corp. NP82N04MUG-S18-AY

生命周期状态
EOL
RoHS
符合RoHS标准
说明
Power MOSFETs for Automotive
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-220AB
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
82 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
40 V
Operating Temperature-Max
175 Cel
Power Dissipation-Max (Abs)
143 W
Transistor Element Material
SILICON
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Drain-source On Resistance-Max
0.0042 ohm
Pulsed Drain Current-Max (IDM)
328 A
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Width
9.15
Length
10