NP60N04MUG-S18-AY
Renesas Electronics Corp.
- 生命周期状态EOL
- RoHS符合RoHS标准
- REACHREACH compliant
- 说明Power MOSFETs for Automotive
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-PSFM-T3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-220AB
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- DLA QualificationNot Qualified
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)88
- Drain Current-Max (ID) (A)60
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)40
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Operating Temperature-Max (Cel)175
- Pulsed Drain Current-Max (IDM) (A)240
- Drain-source On Resistance-Max (ohm)0.0063
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Width9.15
- Length10
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NP60N04MUG-S18-AY