NP60N04MUG
Renesas Electronics Corp.
- 生命周期状态NRFND
- 说明Power Field-Effect Transistor, 110A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- ConfigurationSINGLE
- JESD-609 Codee0
- Surface MountNO
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal FinishTin/Lead (Sn/Pb)
- Number of Elements1
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)110 A
- Operating Temperature-Max175 Cel
- Power Dissipation-Max (Abs)288 W
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NP60N04MUG