Renesas Electronics Corp. NP36P06SLG-E1 | 搜芯易Sourcengine

Renesas Electronics Corp. NP36P06SLG-E1

生命周期状态
Discontinued
说明
Power Field-Effect Transistor, 36A I(D), 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
56
Drain Current-Max (ID) (A)
36
Transistor Element Material
SILICON
Operating Temperature-Max (Cel)
175