Renesas Electronics Corp. NP32N055SHE-E1-AZ | 搜芯易Sourcengine

Renesas Electronics Corp. NP32N055SHE-E1-AZ

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Power Field-Effect Transistor, 32A I(D), 55V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

Application
SWITCHING
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-252AA
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
66
Drain Current-Max (ID) (A)
32
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
62
DS Breakdown Voltage-Min (V)
55
Feedback Cap-Max (Crss) (pF)
170
Turn-off Time-Max (toff) (ns)
82
Operating Temperature-Max (Cel)
175
Power Dissipation Ambient-Max (W)
1.2
Avalanche Energy Rating (Eas) (mJ)
49
Pulsed Drain Current-Max (IDM) (A)
100
Drain-source On Resistance-Max (ohm)
0.025