Renesas Electronics Corp. NP110N055PUJ-E2B-AY | 搜芯易Sourcengine

Renesas Electronics Corp. NP110N055PUJ-E2B-AY

生命周期状态
EOL
RoHS
符合RoHS标准
说明
Power MOSFETs for Automotive
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-263AB
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
110 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
55 V
Operating Temperature-Max
175 Cel
Power Dissipation-Max (Abs)
288 W
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
435 mJ
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Drain-source On Resistance-Max
0.0024 ohm
Pulsed Drain Current-Max (IDM)
440 A
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Width
9.15
Length
10