Renesas Electronics Corp. NESG3033M14-AFB | 搜芯易Sourcengine

Renesas Electronics Corp. NESG3033M14-AFB

生命周期状态
Discontinued
REACH
REACH compliant
说明
RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon Germanium, NPN
类别
Semiconductors Transistors RF Small Signal Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
R-PDSO-F4
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
FLAT
J-STD-609 Code
e0
Terminal Finish
TIN LEAD
DLA Qualification
Not Qualified
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Highest Frequency Band
L BAND
Transistor Element Material
SILICON GERMANIUM
Collector Current-Max (IC) (A)
0.035
Operating Temperature-Max (Cel)
150
Collector-emitter Voltage-Max (V)
4.3
Collector-base Capacitance-Max (pF)
0.25