Renesas Electronics Corp. NESG3031M14-T3-A | 搜芯易Sourcengine

Renesas Electronics Corp. NESG3031M14-T3-A

生命周期状态
EOL
RoHS
符合RoHS标准
REACH
REACH compliant
说明
RF SMALL SIGNAL TRANSISTOR
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-F4
Configuration
SINGLE
JESD-609 Code
e6
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
FLAT
Terminal Finish
TIN BISMUTH
Terminal Position
DUAL
Additional Feature
LOW NOISE
Number of Elements
1
Number of Terminals
4
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Highest Frequency Band
C BAND
Transistor Application
AMPLIFIER
DC Current Gain-Min (hFE)
220
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
0.035 A
Power Dissipation-Max (Abs)
0.15 W
Transistor Element Material
SILICON GERMANIUM
Collector-emitter Voltage-Max
4.3 V
Collector-base Capacitance-Max
0.25 pF