Renesas Electronics Corp. NESG2101M16-T3-A | 搜芯易Sourcengine

Renesas Electronics Corp. NESG2101M16-T3-A

生命周期状态
Discontinued
RoHS
符合RoHS标准
REACH
REACH compliant
说明
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon Germanium, NPN
类别
Semiconductors Transistors RF Small Signal Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
R-PDSO-F6
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
FLAT
DLA Qualification
Not Qualified
Terminal Position
DUAL
Additional Feature
LOW NOISE
Number of Elements
1
Number of Terminals
6
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Highest Frequency Band
L BAND
DC Current Gain-Min (hFE)
130
Power Dissipation-Max (W)
0.19
Moisture Sensitivity Level
1
Transistor Element Material
SILICON GERMANIUM
Peak Reflow Temperature (Cel)
225
Collector Current-Max (IC) (A)
0.1
Operating Temperature-Max (Cel)
150
Collector-emitter Voltage-Max (V)
5
Collector-base Capacitance-Max (pF)
0.5
Transition Frequency-Nom (fT) (MHz)
17000