Renesas Electronics Corp. NESG2101M05-T1-A | 搜芯易Sourcengine

Renesas Electronics Corp. NESG2101M05-T1-A

生命周期状态
Discontinued
RoHS
符合RoHS标准
说明
Trans RF BJT NPN 5V 0.1A 500mW 4-Pin Thin-Type Super Mini-Mold T/R
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Surface Mount
YES
Number of Elements
1
Polarity/Channel Type
NPN
DC Current Gain-Min (hFE)
130
Collector Current-Max (IC)
0.1 A
Power Dissipation-Max (Abs)
0.5 W
Transistor Element Material
SILICON GERMANIUM