NESG2021M16
Renesas Electronics Corp.
- 生命周期状态Discontinued
- 说明RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, Silicon Germanium, NPN
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- Surface MountYES
- Number of Elements1
- Polarity/Channel TypeNPN
- DC Current Gain-Min (hFE)130
- Collector Current-Max (IC)0.035 A
- Power Dissipation-Max (Abs)0.175 W
- Transistor Element MaterialSILICON GERMANIUM
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NESG2021M16
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NESG2021M16