NES1720P-140
Renesas Electronics Corp.
- 生命周期状态Discontinued
- 说明RF Power Field-Effect Transistor, 2-Element, L Band, N-Channel, Metal Semiconductor FET
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.75
- SB Code8541.29.00.80
- ConfigurationCOMMON SOURCE, 2 ELEMENTS
- FET TechnologyMETAL SEMICONDUCTOR
- Operating ModeDEPLETION MODE
- Case ConnectionSOURCE
- Number of Elements2
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandL BAND
- Drain Current-Max (ID) (A)76
- Operating Temperature-Max (Cel)175
- Power Dissipation Ambient-Max (W)270
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NES1720P-140
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NES1720P-140