Renesas Electronics Corp. NEM090603M-28-A | 搜芯易Sourcengine

Renesas Electronics Corp. NEM090603M-28-A

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
N-CHANNEL POWER MOSFET
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
R-PDFM-F2
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
FLAT
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e6
Operating Mode
ENHANCEMENT MODE
Case Connection
SOURCE
Terminal Finish
Tin/Bismuth (Sn/Bi)
DLA Qualification
Not Qualified
Terminal Position
DUAL
Additional Feature
HIGH RELIABILITY
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
Power Gain-Min (Gp) (dB)
16
Power Dissipation-Max (W)
146
Drain Current-Max (ID) (A)
6
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
65
Operating Temperature-Max (Cel)
200