Renesas Electronics Corp. NE97833-T1B-A | 搜芯易Sourcengine

Renesas Electronics Corp. NE97833-T1B-A

生命周期状态
EOL
RoHS
符合RoHS标准
REACH
REACH compliant
说明
RF TRANS PNP 12V 5.5GHZ SOT23
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-G3
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
Terminal Position
DUAL
Additional Feature
HIGH RELIABILITY
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
PNP
Highest Frequency Band
S BAND
Transistor Application
SWITCHING
DC Current Gain-Min (hFE)
20
Operating Temperature-Max
200 Cel
Collector Current-Max (IC)
0.05 A
Power Dissipation-Max (Abs)
0.2 W
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
12 V
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Transition Frequency-Nom (fT)
5500 MHz
Collector-base Capacitance-Max
1 pF
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED