NE960R275
Renesas Electronics Corp.
- 生命周期状态Discontinued
- 说明RF Power Field-Effect Transistor, 1-Element, KU Band, N-Channel, Metal Semiconductor FET
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- ConfigurationSINGLE
- FET TechnologyMETAL SEMICONDUCTOR
- Operating ModeDEPLETION MODE
- Case ConnectionSOURCE
- Number of Elements1
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandKU BAND
- Drain Current-Max (ID) (A)0.3
- DS Breakdown Voltage-Min (V)15
- Operating Temperature-Max (Cel)175
- Power Dissipation Ambient-Max (W)1.5
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NE960R275
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NE960R275