Renesas Electronics Corp. NE856M02-T1-AZ | 搜芯易Sourcengine

Renesas Electronics Corp. NE856M02-T1-AZ

生命周期状态
EOL
RoHS
符合RoHS标准
说明
RF Bipolar Transistors NPN Low Distort Amp
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Configuration
SINGLE
Surface Mount
YES
Number of Elements
1
Polarity/Channel Type
NPN
DC Current Gain-Min (hFE)
50
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
0.1 A
Power Dissipation-Max (Abs)
1.2 W