Renesas Electronics Corp. NE85639-T1-A | 搜芯易Sourcengine

Renesas Electronics Corp. NE85639-T1-A

生命周期状态
EOL
说明
RF TRANS NPN 12V 9GHZ SOT143
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-G4
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
Terminal Position
DUAL
Additional Feature
LOW NOISE, HIGH RELIABILITY
Number of Elements
1
Number of Terminals
4
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Highest Frequency Band
L BAND
Transistor Application
AMPLIFIER
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
0.1 A
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
12 V
Transition Frequency-Nom (fT)
9000 MHz
Collector-base Capacitance-Max
0.9 pF