Renesas Electronics Corp. NE8500200-WB | 搜芯易Sourcengine

Renesas Electronics Corp. NE8500200-WB

生命周期状态
Discontinued
说明
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
R-XXUC-N
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
UNCASED CHIP Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
METAL SEMICONDUCTOR
Operating Mode
DEPLETION MODE
Case Connection
SOURCE
Terminal Position
UNSPECIFIED
Additional Feature
HIGH RELIABILITY
Number of Elements
1
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
C BAND
Drain Current-Max (ID) (A)
2.5
Transistor Element Material
GALLIUM ARSENIDE
DS Breakdown Voltage-Min (V)
10