Renesas Electronics Corp. NE69039FB | 搜芯易Sourcengine

Renesas Electronics Corp. NE69039FB

生命周期状态
NRFND
REACH
REACH compliant
说明
RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN
类别
Semiconductors Transistors RF Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.21.00.75
SB Code
8541.21.00.80

Application
AMPLIFIER
JESD-30 Code
R-PDSO-G4
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
Case Connection
COLLECTOR
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Highest Frequency Band
L BAND
Power Gain-Min (Gp) (dB)
5
DC Current Gain-Min (hFE)
60
Transistor Element Material
SILICON
Collector Current-Max (IC) (A)
0.3
Operating Temperature-Max (Cel)
150
Collector-emitter Voltage-Max (V)
6
Power Dissipation Ambient-Max (W)
0.2