Renesas Electronics Corp. NE69039 | 搜芯易Sourcengine

Renesas Electronics Corp. NE69039

生命周期状态
NRFND
REACH
REACH compliant
说明
RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN
类别
Semiconductors Transistors RF Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.21.00.75
SB Code
8541.21.00.80

JESD-30 Code
R-PDSO-G4
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
Case Connection
COLLECTOR
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
4
Power Gain-Min (Gp)
5 dB
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Highest Frequency Band
L BAND
Transistor Application
AMPLIFIER
DC Current Gain-Min (hFE)
60
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
0.3 A
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
6 V
Power Dissipation Ambient-Max
0.2 W