Renesas Electronics Corp. NE651R479A-T1 | 搜芯易Sourcengine

Renesas Electronics Corp. NE651R479A-T1

生命周期状态
Discontinued
说明
RF Power Field-Effect Transistor, 1-Element, L Band, N-Channel, Junction FET
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.75
SB Code
8541.29.00.80

Configuration
SINGLE
FET Technology
JUNCTION
Operating Mode
DEPLETION MODE
Case Connection
SOURCE
Number of Elements
1
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
L BAND
Drain Current-Max (ID) (A)
1
Operating Temperature-Max (Cel)
150
Power Dissipation Ambient-Max (W)
2.5