NE6500278-E3
Renesas Electronics Corp.
- 生命周期状态Discontinued
- 说明RF Power Field-Effect Transistor, 1-Element, L Band, N-Channel, Metal Semiconductor FET
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.75
- SB Code8541.29.00.80
- ConfigurationSINGLE
- FET TechnologyMETAL SEMICONDUCTOR
- J-STD-609 Codee0
- Operating ModeENHANCEMENT MODE
- Terminal FinishTin/Lead (Sn/Pb)
- Number of Elements1
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandL BAND
- Drain Current-Max (ID) (A)10
- Operating Temperature-Max (Cel)150
- Power Dissipation Ambient-Max (W)25
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NE6500278-E3
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NE6500278-E3