CALIFORNIA EASTERN LABORATORIES NE57500 | 搜芯易Sourcengine

CALIFORNIA EASTERN LABORATORIES NE57500

生命周期状态
Discontinued
说明
RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN
类别
Semiconductors Transistors RF Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.40
SB Code
8541.29.00.40

JESD-30 Code
R-XUUC-N2
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
UNCASED CHIP Meter
Surface Mount
YES
Terminal Form
NO LEAD
Terminal Position
UPPER
Number of Elements
1
Number of Terminals
2
Power Gain-Min (Gp)
3.5 dB
Qualification Status
Not Qualified
Package Body Material
UNSPECIFIED
Polarity/Channel Type
NPN
Highest Frequency Band
L BAND
Transistor Application
AMPLIFIER
DC Current Gain-Min (hFE)
15
Operating Temperature-Max
200 Cel
Collector Current-Max (IC)
0.25 A
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
20 V
Power Dissipation Ambient-Max
7.5 W
Transition Frequency-Nom (fT)
2000 MHz