Renesas Electronics Corp. NE5550779A-T1A-A | 搜芯易Sourcengine

Renesas Electronics Corp. NE5550779A-T1A-A

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Trans RF MOSFET N-CH 30V 2.1A 4-Pin Case 79A T/R
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
R-XQMW-F4
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
MICROWAVE Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
SOURCE
Terminal Position
QUAD
Additional Feature
HIGH EFFICIENCY
Number of Elements
1
Number of Terminals
4
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
Power Dissipation-Max (W)
17.8
Drain Current-Max (ID) (A)
2.1
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
25
Operating Temperature-Max (Cel)
150