Renesas Electronics Corp. NE5550779A-T1-A | 搜芯易Sourcengine

Renesas Electronics Corp. NE5550779A-T1-A

生命周期状态
EOL
RoHS
符合RoHS标准
REACH
REACH compliant
说明
FET RF 30V 900MHZ 79A-PKG
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Configuration
SINGLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
SOURCE
Number of Elements
1
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
Power Dissipation-Max (W)
17.8
Drain Current-Max (ID) (A)
2.1
DS Breakdown Voltage-Min (V)
25
Operating Temperature-Max (Cel)
150