Renesas Electronics Corp. NE5550279A-A | 搜芯易Sourcengine

Renesas Electronics Corp. NE5550279A-A

生命周期状态
EOL
RoHS
符合RoHS标准
REACH
REACH compliant
说明
FET RF 30V 900MHZ 79A
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.75
SB Code
8541.29.00.80

JESD-30 Code
R-XQMW-F4
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
MICROWAVE Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
SOURCE
Terminal Position
QUAD
Number of Elements
1
Number of Terminals
4
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
0.6 A
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
DS Breakdown Voltage-Min
30 V
Operating Temperature-Max
150 Cel
Transistor Element Material
SILICON
Power Dissipation Ambient-Max
6.25 W